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The ECE444 laboratory uses a recipe which will yield working electronic devices if followed correctly.

Students are advised to read through the process procedures thoroughly so that they understand the process sequence. Extreme care and attention to detail will ensure the fabrication of working devices.

Fabrication of both bipolar and field effect devices on student wafers using diffusion for doping requires a compromise in the performance of both types of devices. In addition, time limitations also compromise electrical characteristics. So keep in mind that the wafers fabricated in lab will not exhibit ideal qualities!

IC Process

1. RCA clean

2. Initial oxidation

3. Mask 1

4. Mask 1 etch

5. Mask 1 PR removal

6. Boron predep

7. BSG etch

8. Boron drive

9. Mask 2

10. Mask 2 etch

11. Mask 2 PR removal

12. Phosphorus predep

13. PSG Etch

14. Mask 3

15. Mask 3 etch

16. Mask 3 removal

17. Gate oxidation

18. Mask 4

19. Mask 4 etch

20. Mask 4 removal

21. Mask 5

22. Evaporation

23. Lift off

24. Anneal

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Department of Electrical and Computer Engineering
College of Engineering
University of Illinois Urbana-Champaign

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