You are not logged in Log in Login
UIUC ECE Title Bar ece444
Theory and Fabrication of Integrated Circuits University of Illinois at Urbana-Champaign logo HOME ·
LECTURE ·
LAB ·
GT ·
CALCULATORS · Text Only
· · · · ·
Students performing oxidation
Load Inverters
Resistor Load Inverter
Resistor Load Inverter
The resistor load inverter is designed to be configured several ways. There are five drive FETs, with W/L ratios corresponding to 1, 2, 3, 4, and 5. The FETs designed length is 20 μm, and the designed widths are 20, 40, 60, 80, and 100 μm. The resistor has nine pads on it, each corresponding to a different load resistor length.
FET Load Inverter
Resistor Load Inverter
The FET load inverter has been designed with 4 drivers and 4 loads. You can choose which driver/load combination to use to produce the best voltage transfer characteristics. The four drivers are gate 20 μm long, and 20, 50, 100, and 200 μm wide. The loads are all 10 μm wide and 20, 30, 40 and 50 microns long. The W/L ratios for the drivers and L/W ratios for the loads are printed on the mask.
Devices
Inverters
LASI was used for mask layout.
The mask set is currently under revision 1998: Dane Sievers, which is a minor redesign of revision 1994: Ron Stack. All revisions are based on the work of revision 1991: Kevin Tsurutome.
Answers provided by this service may not be relevant to the materials presented in this website.
Department of Electrical and Computer Engineering
College of Engineering
University of Illinois Urbana-Champaign
Contact ece444
Copyright © 2007, 2008 The Board of Trustees at the University of Illinois. All rights reserved.
archives: ©1999 ©2000 ©2004 ©2005 ©2006
