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GT8 · Oxide growth calculation (Grove’s Model)
Grove's model - time calculation and Grove's model - tau calculation ,
Grove's model - B calculation and Grove's model - B/A calculation
Where T is in Kelvin
Coefficients for Grove's Model
Note: the coefficients given below are for (111) oriented wafers. To solve the Deal-Grove model for oxidation of a (100) wafer, divide C2 by 1.68 (Anner, p.594).
| C1 (cm2/s) | C2 (cm/s) | b1 (K) | b2 (K) |
| Dry | 2.144 x 10-9 | 0.173 | 1.427 x 104 | 2.320 x 104 |
| Wet | 5.940 x 10-10 | 2.490 | 8.237 x 103 | 2.320 x 104 |
| Steam | 1.070 x 10-9 | 4.530 | 9.049 x 103 | 2.378 x 104 |
SiO2 Diffusion Coefficient Calculation
| Diffusant | A* | B* | D@1200°C |
| H2 | 3.02 | 3490 | 4 x 10-6cm2/s |
| He | 6.57 | 1050 | 5 x 10-8 |
| H2O | | | 2 x 10-9 |
| O2 | | | 3 x 10-8 |
| Al | | | 2 x 10-11 |
| Ga | | | 4 x 10-12 |
| Sb | | | 2 x 10-14 |
| P (open tube, P2O5) | | | 3 x 10-15 |
| B | 3.55 | 15400 (T<1100°C) | 2.5 x 10-16 |
| | 10.24 | 6300 (T>1100°C) | |
| General Equation for Calculation of Diffusion Coefficient | Relative dielectric constant | SiO2 atomic concentration (cm-3) | Sources |
| Diffusion coefficient calculation T in Kelvin A & B from above | εr = 3.9 | 2.3 x 1022
| Burger and Donovan, Vol. 1 Grove Ghandi |
Graphs and Tables
GT8 · SiO2 Equations
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