Warning! This is an archived version of the 2005 site.   
ECE444: Theory and Fabrication of Integrated Circuits   http://ece.uiuc.edu    
Main | Lecture |   Lab | Recipe | Testing | Logsheets^† | GT Section | Utilities | Administration^†   
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RECIPE:    

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1: RCA Clean   
2: Initial Oxidation   
3: Photolith Level 1   
4: Level 1 Etch   
5: Level 1 PR Removal   
6: Boron Predep   
7: BSG Etch   
8: Boron Drive   
9: Photolith Level 2   
10: Level 2 Etch   
11: Level 2 PR Removal   
12: Phophorus Predep   
13: PSG Etch   
14: Photolith Level 3   
15: Level 3 Etch   
16: Level 3 PR Removal   
17: Gate Oxidation   
18: Photolith Level 4   
19: Level 4 Etch   
20: Level 4 PR Removal   
21: Photolith Level 5   
22: Evaporation   
23: Lift-off   
24: Anneal   
25: Testing   

The ECE444 laboratory uses a recipe which will give working electronic devices if followed correctly.

Students are advised to read through the process procedures thoroughly so that they understand the process sequence. Extreme care and attention to detail will ensure the fabrication of working devices.

Fabrication of both bipolar and field effect devices on student wafers using diffusion for doping requires a compromise in the performance of both types of devices. In addition, time limitations also compromise electrical characteristics. So keep in mind that the wafers fabricated in lab will not exhibit ideal qualities!

© 2004, 2005: ECE444   
Electrical and Computer Engineering Department   
University of Illinois Urbana-Champaign   
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