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Level 3 Photoresist Removal

This step removes photoresist to prevent contamination of furnaces.

Equipment 

• Solvent waste container
• Microscope

Supplies

• Acetone
• IPA
• DI water

Operating parameters

three 15 second acetone rinses

-or-

7.5 min plasma ash

Equipment/controls/tools locations

Room 50J

• Solvent fume hood
• Microscope

Operating precautions

Chemical hazard

PR, acetone, and ipa are volatile and flammable. Keep away from flame. Possible biological hazards: only use in a fume hood.

Operating procedure

1. Initial PR Removal: Hold your wafer level over the waste acetone/IPA container (with the lid off) and squirt acetone on the wafer until it begins to flow off the edges. Let it dissolve the PR for 10-15 seconds before tossing the acetone into the waste container. Repeat until most of the PR is gone (~3 times).
2. Strip off any remaining PR residue by following the standard degreasing procedure (Acetone, IPA, DI, IPA, N2 dry.)
3. Inspect the wafer under a microscope for PR residue. Go back and degrease if necessary. Incomplete photoresist removal is the most common cause of furnace tube contamination. Please inspect wafers thoroughly.

IC Process

1. RCA clean

2. Initial oxidation

3. Mask 1

4. Mask 1 etch

5. Mask 1 PR removal

6. Boron predep

7. BSG etch

8. Boron drive

9. Mask 2

10. Mask 2 etch

11. Mask 2 PR removal

12. Phosphorus predep

13. PSG Etch

14. Mask 3

15. Mask 3 etch

16. Mask 3 removal

17. Gate oxidation

18. Mask 4

19. Mask 4 etch

20. Mask 4 removal

21. Mask 5

22. Evaporation

23. Lift off

24. Anneal

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