P-MOSFETs

The ICS Instructions contain the basic procedures for making measurements. This screen is intended to point out things unique to using the PMOS model file.

Device Selection

Below are some guidelines for chosing which devices to measure for each of the Devices Under Test (DUTs). Normally, you will only have to fill in a single model since each requires probing 3 devices.

pMOSFETs

large → Use the 20 μm gate oxide PMOSFET
narrow → Use one of the left-most FETs in the bottom row of the pMOSFET array.
short → Use the shortest channel gate oxide pMOSFET you can find that works. Think about which diffusion created the source and drain, then try to figure out what the shortest possible channel length device will work - this will save you time by eliminating devices that will probably be shorted.
cap perimeter → Use the "large" FET for this measurement. It doesn't matter whether the Drainor Source is used for the CM(L) connection.
cap area → Use the "narrow" FET for this measurement. It doesn't matter whether the Drain or Source is used for the CM(L) connection.

Probe Assignments

SMU1 and CM(H) → probe1 → Substrate (long rectangular pads at the top and bottom of the cell)
SMU2 and CM(L) → probe2 → Drain
SMU3 → probe3 → Gate
SMU4 and CM(L) → probe4 → Source

Note: CM(L) will have to be connected to either the Drain (probe2) or Source (probe4) as needed to complete the measurements.